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| SBB-5000 0.05GHz to 6GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier Preliminary SBB-5000 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: Bare Die Product Description RFMD's SBB-5000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel water qualification. Die can be delivered at the wafer level or picked to gel or waffle paks. Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 30.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 Features OIP3=35dBm @ 2000MHz P1dB =20.5dBm @ 2000MHz Single Fixed 5V Supply Compact Die Size (0.59mmx0.70mm) Patented Thermal Design & Bias Circuit Low Thermal Resistance Gain and Return Loss versus Frequency VS=5V, IS=75mA Applications PA Driver Amplifier RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation Gain and Return Loss (dB) GSG Probe Data with Bias Tees ZS=ZL=50 Ohms, T=25C IRL Gain ORL Frequency (GHz) Parameter Frequency of Operation Small Signal Gain Min. 50 Specification Typ. Max. Unit Condition 6000 MHz 20.5 dB Frequency=500MHz 20.5 dB Frequency=2000Mhz 20.0 dB Frequency=4000MHz Output Power at 1dB Compression 21.0 dBm Frequency=500MHz 20.5 dBm Frequency=2000MHz 17.0 dBm Frequency=4000MHz Output IP3 37.0 dBm Frequency=500MHz 35.0 dBm Frequency=2000MHz 30.0 dBm Frequency=4000MHz Input Return Loss 15.0 dB Frequency=2000MHz Output Return Loss 12.0 dB Frequency=2000MHz Current 75.0 mA Noise Figure 3.9 dB Frequency=2000MHz Thermal Resistance 69.9 C/W Junction to lead (89 pkg) Test Conditions: Z0 =50, VD =5V, ID =75mA, T=25C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees. RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. EDS-106102 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- 1 of 6 SBB-5000 Absolute Maximum Ratings Parameter Total Current (ID) Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power Storage Temperature Range Operating Junction Temperature (TJ) Preliminary Rating 100 5.5 0.55 -40 to +85 +12 (TBR)* -55 to +150 +150 Unit mA V W C dBm C C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. ESD Rating - Human Body Model (HBM) * TBR=To Be Reviewed Class 1C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance (GSG Probe Data with Bias Tees) VD =5V, ID =75mA, T=25C, Z=50 Parameter Units dB dBm dBm dB dB dB dB 500MHz 20.5 37.0 21.0 27.0 22.0 22.1 3.8 1000MHz 1500MHz 2000MHz 3000MHz 4000MHz 20.5 36.0 20.5 21.0 18.0 22.5 4.0 20.5 35.0 20.5 17.0 14.6 22.4 3.9 20.5 35.0 20.5 15.0 12.0 22.9 3.9 20.5 33.0 19.5 11.0 9.0 23.0 4.0 20.0 30.0 17.0 9.5 7.2 23.0 3.8 Small Signal Gain Output 3rd Order Intercept Point (see note 1) Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure Note 1: 0dBm/tone, 1MHz spacing 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- EDS-106102 Rev A Preliminary Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =75mA P1dB versus Frequency 24.0 22.0 20.0 45.0 SBB-5000 OIP3 versus Frequency (0dBm/Tone, 1MHz Spacing) -20C 25C 85C -20C 25C 85C 40.0 P1dB (dBm) OIP3 (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 18.0 16.0 14.0 35.0 30.0 25.0 12.0 10.0 20.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) Current versus Voltage 90.0 85.0 80.0 6.0 5.0 Noise Figure versus Frequency Noise Figure (dB) -20C 25C 85C 4.8 4.9 5.0 5.1 5.2 5.3 75.0 4.0 3.0 2.0 1.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 ID (mA) 70.0 65.0 60.0 55.0 50.0 25C 85C VD (V) Frequency (GHz) EDS-106102 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- 3 of 6 SBB-5000 S11 versus Frequency 0.0 -5.0 -10.0 Preliminary Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =75mA S21 versus Frequency 24.0 22.0 -20C 25C 85C S11 (dB) -15.0 -20.0 -25.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 S21 (dB) -20C 25C 85C 20.0 18.0 16.0 14.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) S12 versus Frequency 0.0 -5.0 -10.0 0.0 -5.0 -10.0 S22 versus Frequency S12 (dB) -15.0 -20.0 -25.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 S22 (dB) -15.0 -20.0 -20C 25C 85C -25.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 -20C 25C 85C 6.0 Frequency (GHz) Frequency (GHz) 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- EDS-106102 Rev A Preliminary Pin Function RF IN RF OUT DIE BACKSIDE Description This pad is DC coupled and matched to 50. An external DC block is required. This pad is DC coupled and matched to 50. DC bias is applied through this pad. Die backside must be connected to RF/DC ground using silver filled conductive epoxy. SBB-5000 Notes: 1. All dimensions in inches [millimeters]. 2. Die thickness is 0.004 [0.100]. 3. Typical bond pad is 0.003x0.006 4. Backside metallization: Gold. 5. Bond pad metallization: Gold. 6. Backside is ground. Die Dimensions EDS-106102 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- 5 of 6 SBB-5000 Preliminary Device Assembly Ordering Information Part Number SBB-5000 Description Bare Die Devices/Container 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-sup- EDS-106102 Rev A |
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